5th International Workshop on Crystal Growth Technology, Berlin, Germany, 26 June-30 June 2011UECKER, Reinhard; BLISS, David F; GANSCHOW, Steffen et al.Journal of crystal growth. 2012, Vol 360, issn 0022-0248, 204 p.Conference Proceedings

Nonlinear model-based control of the Czochralski process III: Proper choice of manipulated variables and controller parameter schedulingNEUBERT, M; WINKLER, J.Journal of crystal growth. 2012, Vol 360, pp 3-11, issn 0022-0248, 9 p.Conference Paper

Purification of silicon for photovoltaic applicationsDELANNOY, Yves.Journal of crystal growth. 2012, Vol 360, pp 61-67, issn 0022-0248, 7 p.Conference Paper

Monte Carlo simulation of growth of hard-sphere crystals on a square patternMORI, Atsushi.Journal of crystal growth. 2011, Vol 318, Num 1, pp 66-71, issn 0022-0248, 6 p.Conference Paper

Steady chirality conversion by grinding crystals—Supercritical and subcritical bifurcationsUWAHA, Makio.Journal of crystal growth. 2011, Vol 318, Num 1, pp 89-92, issn 0022-0248, 4 p.Conference Paper

Dissolution kinetics at edge dislocation site of (1 1 1) surface of copper crystalsIMASHIMIZU, Y.Journal of crystal growth. 2011, Vol 318, Num 1, pp 125-130, issn 0022-0248, 6 p.Conference Paper

Analysis of the practical stability of dewetted Bridgman growth of GaAsEPURE, Simona; DUFFAR, Thierry.Journal of crystal growth. 2012, Vol 360, pp 25-29, issn 0022-0248, 5 p.Conference Paper

Problems and recent advances in melt crystal growth technologyZHARIKOV, Evgeny V.Journal of crystal growth. 2012, Vol 360, pp 146-154, issn 0022-0248, 9 p.Conference Paper

Study on influence of growth conditions on position and shape of crystal/melt interface of alkali lead halide crystals at Bridgman growthKRAL, Robert.Journal of crystal growth. 2012, Vol 360, pp 162-166, issn 0022-0248, 5 p.Conference Paper

The 16th International Conference on Crystal Growth (ICCG16)/The 14th International Conference on Vapor Growth and Epitaxy (ICVGE14), 8-13 August 2010, Beijing, ChinaCHEN, Chuangtian; KUECH, Thomas F; NISHINAGA, Tatau et al.Journal of crystal growth. 2011, Vol 318, Num 1, issn 0022-0248, 1203 p.Conference Proceedings

Recent developments in understanding of the metastable zone width of different solute―solvent systemsSANGWAL, K.Journal of crystal growth. 2011, Vol 318, Num 1, pp 103-109, issn 0022-0248, 7 p.Conference Paper

Relation between growth and melt shapes of ice crystalsMARUYAMA, Minoru.Journal of crystal growth. 2011, Vol 318, Num 1, pp 36-39, issn 0022-0248, 4 p.Conference Paper

Step bunching induced by flow in solutionSATO, Masahide.Journal of crystal growth. 2011, Vol 318, Num 1, pp 5-9, issn 0022-0248, 5 p.Conference Paper

Influence of solid―liquid interface shape on striations during CZ InSb single crystal growth in ultrasonic fieldsKOZHEMYAKIN, G. N.Journal of crystal growth. 2012, Vol 360, pp 35-37, issn 0022-0248, 3 p.Conference Paper

Zipping process on the step bunching in the vicinal surface of the restricted solid-on-solid model with the step attraction of the point contact typeAKUTSU, Noriko.Journal of crystal growth. 2011, Vol 318, Num 1, pp 10-13, issn 0022-0248, 4 p.Conference Paper

Float-Zone silicon crystal growth at reduced RF frequenciesROST, H.-J; MENZEL, R; LUEDGE, A et al.Journal of crystal growth. 2012, Vol 360, pp 43-46, issn 0022-0248, 4 p.Conference Paper

Heat distribution during melting and solidification of NaI(Tl) using skull techniqueTARANYUK, V; GEKTIN, A; KISIL, I et al.Journal of crystal growth. 2012, Vol 360, pp 95-98, issn 0022-0248, 4 p.Conference Paper

Modern trends in crystal growth and new applications of sapphireAKSELROD, Mark S; BRUNI, Frank J.Journal of crystal growth. 2012, Vol 360, pp 134-145, issn 0022-0248, 12 p.Conference Paper

Structural and surface topography analysis of AlN single crystals grown on 6H―SiC substratesSUMATHI, R. R; BARZ, R. U; STRAUBINGER, T et al.Journal of crystal growth. 2012, Vol 360, pp 193-196, issn 0022-0248, 4 p.Conference Paper

Crystal growth and scintillation properties of Cs₃CeCl₆ and CsCe₂Cl₇ZHURAVLEVA, M; YANG, K; MELCHER, C. L et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 809-812, issn 0022-0248, 4 p.Conference Paper

Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski siliconBIAO WANG; XINPENG ZHANG; XIANGYANG MA et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 183-186, issn 0022-0248, 4 p.Conference Paper

Germanium―silicon single crystal growth by the axial heat processing (AHP) techniqueDARIO, Aidin; OZGEN SICIM, Hasan; BALIKCI, Ercan et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 1057-1061, issn 0022-0248, 5 p.Conference Paper

MPB design and crystal growth of PMN-PT-PZ relaxor ferroelectricsQIANG LI; YILING ZHANG; ZHIGUO XIA et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 851-855, issn 0022-0248, 5 p.Conference Paper

Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamicsMERCIER, Frederic; NISHIZAWA, Shin-Ichi.Journal of crystal growth. 2011, Vol 318, Num 1, pp 385-388, issn 0022-0248, 4 p.Conference Paper

Stability of hydrogen on nonpolar and semipolar nitride surfaces: Role of surface orientationAKIYAMA, Toru; YAMASHITA, Tomoki; NAKAMURA, Kohji et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 79-83, issn 0022-0248, 5 p.Conference Paper